Neodymium Gallate NdGaO3
NaGaO3 is widely used as a substrate for the epitaxial growth of magnetic, ferroelectric, and superconducting materials. Furthermore, the (011) plane, which has a lattice length and symmetry close to GaN(0001), is gaining attention as an epitaxial substrate for GaN.
Characteristics
| Composition | NdGaO3 |
|---|---|
| Crystal system | Orthorhombic |
| Crystal structure | Perovskite |
| Lattice constant | a=0.5431 nm, b=0.5499 nm, c=0.7710 nm |
| Melting point | 1650 ℃ |
| Density | 7.56 g/cm3 |
| Crystal growth method | CZ method |
| Dielectric constant | 20～25 (27℃,1 MHz) |
| Thermal expansion coefficient | 10×10-6/℃ |
Standard Specs
| Size (Outer size tolerance: ±0.1 mm / Thickness tolerance: ±0.05 mm) |
10×10×0.5 t 15×15×0.5 t |
|---|---|
| Orientation (Tolerance: ±0.5°) |
(100), (001) (110), (011) |
| Polishing | One-side / Both-side |
| Surface roughness | Ra≦1.0 nm, Rmax≦5.0 nm |
| Flatness (λ=632.8 nm) |
10×10×0.5 t ≦λ 15×15×0.5 t ≦1.5 λ |