Wafer Inventory List

Updated on February 17, 2026
SiC Wafer Inventory
Size Type Grade Thickness Off-Angle Surface Finish
5 mm 4H-P Dummy 350 ± 25 μm 0°～4° ± 0.5° Si Face: CMP Finish
C Face: Optical Mirror Finish (Mirror)
10 mm 4H-P Dummy 350 ± 25 μm 0°～4° ± 0.5° Si Face: CMP Finish
C Face: Optical Mirror Finish (Mirror)
5 mm 6H-P Dummy 350 ± 25 μm 0°～4° ± 0.5° Si Face: CMP Finish
C Face: Optical Mirror Finish (Mirror)
10 mm 6H-P Dummy 350 ± 25 μm 0°～4° ± 0.5° Si Face: CMP Finish
C Face: Optical Mirror Finish (Mirror)
5 mm 3C-N Dummy 350 ± 25 μm <0001> ± 0.5° Si Face: CMP Finish
C Face: Optical Mirror Finish (Mirror)
10 mm 3C-N Dummy 350 ± 25 μm <0001> ± 0.5° Si Face: CMP Finish
C Face: Optical Mirror Finish (Mirror)
5 mm Semi-insulating Dummy 500 ± 25 um <0001> ± 0.2° Si Face: CMP Finish
C Face: Optical Mirror Finish (Mirror)
6 Inch 4H-N Dummy 350 ± 25 um 4˚ toward <11-20> ±0.5˚ Si Face: CMP Finish
C Face: Optical Mirror Finish (Mirror)
Si Wafer Inventory
Size Manufacturing
Method		 Type Dopant Diameter
(mm)		 Thickness
(µm)		 Finish Resistivity
(Ω·cm)		 Crystal
Orientation		 Stock
4 inch CZ N Phos 100 ± 0.5 525 ± 15 Single-Side Mirror 1 ~ 5 <100> ± 1° 150
4 inch CZ N Phos 100 ± 0.5 525 ± 15 Single-Side Mirror 1 ~ 5 <110> ± 1° 100
4 inch CZ P Boron 100 ± 0.5 525 ± 15 Single-Side Mirror 1 ~ 5 <100> ± 1° 150
4 inch CZ P Boron 100 ± 0.5 525 ± 15 Single-Side Mirror 1 ~ 5 <110> ± 1° 100
InP Wafer Inventory
Size Manufacturing
Method		 Type Dopant Diameter
(mm)		 Thickness
(µm)		 Finish EPD
(/cm2)		 Crystal
Orientation		 TTV
(µm)		 TIR
(µm)		 Bow
(µm)		 Warp
(µm)		 Stock
2 inch VGF N InP-S 50.0 ± 0.3 355 ± 15 Single-Side Mirror 37 - 166 (100)2°± 0.5° off
toward <110> α =225°		 ≤10 ≤10 ≤10 ≤10 160

We are able to accommodate specifications that are not currently in stock, offering superior quality, quick delivery, and competitive pricing.
If the specifications match your needs, please contact us.

Tel: 03-6751-7153
Fax: 03-6761-8935
Email: info@toyokou.co.jp