Developed for applications requiring high electrical conductivity and excellent thermal stability, this is an N-type silicon carbide (SiC) powder.
Containing over 90% of the 6H polytype, it offers excellent crystalline uniformity. It is suitable for use as a raw material for epitaxial growth and other semiconductor manufacturing processes.

Semi-insulating silicon carbide (SiC) powder is a crucial material in the fields of high-frequency devices and optoelectronics. It exhibits excellent electrical insulation, thermal stability, and mechanical strength.
With the rapid development of advanced photonic devices, including AR/VR glasses, the demand for high-purity semi-insulating SiC materials is growing constantly.
By controlling the nitrogen content to less than 1 ppm and achieving an optimized particle size distribution, we provide powder that is highly suitable for growing high-quality semi-insulating SiC single crystals.