Compound Wafer

N-Type SiC Composite Wafer

Items Specification Items Specification
Diameter 150±0.2mm Front (Si-face) roughness Ra≤0.2nm (5μm×5μm)
Type 4H Edge Chip, Scratch, Crack (visual inspection) None
Resistivity 0.015-0.025ohm·cm TTV ≤3μm
Transfer layer Thickness ≥0.4μm Warp ≤35μm
Void ≤5ea/wafer(2mm>D＞0.5mm) Thickness 350±25μm

Semi-Insulating SiC Composite Wafer

Items Specification Items Specification
Diameter 150±0.2mm Front (Si-face) roughness Ra≤0.2nm (5μm×5μm)
Type 4H Edge Chip, Scratch, Crack (visual inspection) None
Resistivity 0.015-0.025ohm·cm TTV ≤3μm
Transfer layer Thickness ≥0.4μm Warp ≤35μm
Void ≤5ea/wafer(2mm>D＞0.5mm) Thickness 500±25μm

N-Type SiC on Si Composite Wafer

Items Specification Items Specification
Diameter 150±0.2mm Si Orientation <111>/<100>/<110>
SiC Type 4H Si Type P/N
SiC Resistivity 0.015-0.025ohm·cm Flat length 47.5±1.5mm
Transfer SiC layer Thickness ≥0.1μm Edge Chip, Scratch, Crack (visual inspection) None
Void ≤5ea/wafer(2mm>D＞0.5mm) TTV ≤5μm
Front roughness Ra≤0.2nm (5μm×5μm） Thickness 500/625/675±25μm

Semi-Insulating SiC on Si Composite Wafer

Items Specification Items Specification
Diameter 150±0.2mm Si Orientation <111>/<100>/<110>
SiC Polytype 4H Si Type P/N
SiC Resistivity ≥1E8ohm·cm Flat/Notch Flat/Notch
Transfer SiC layer Thickness ≥0.1μm Edge Chip, Scratch, Crack (visual inspection) None
Void ≤5ea/wafer(2mm>D＞0.5mm) TTV ≤5μm
Front roughness Ra≤0.2nm (5μm×5μm） Thickness 500/625/675±25μm

Si on AlN Composite Wafer

Items Specification Items Specification
Diameter 150±0.2mm SiC Type 4H
Si Orientation <111>/<100>/<110> SiC Resistivity 0.015-0.025/≥1E8ohm·cm
Si Type P/N Flat/Notch Flat/Notch
Transfer Si layer Thickness ≥0.1μm Edge Chip, Scratch, Crack (visual inspection) None
Void ≤5ea/wafer(2mm>D＞0.5mm) TTV ≤5μm
Front roughness Ra≤0.2nm (5μm×5μm） Thickness 350/500±25μm

Si on AlN複合ウェーハ

Items Specification Items Specification
Diameter 150±0.2mm AlN Resistivity ≥1E8ohm·cm
Si Orientation <111>/<100>/<110> AlN Thermal conductivity ≥180W/mK
Si Type P/N Flat length 47.5±1.5mm
Transfer Si layer Thickness ≥0.1μm TTV ≤5μm
Edge Chip, Scratch, Crack (visual inspection) None Thickness 625±25μm
Front roughness Ra≤0.2nm (5μm×5μm）